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Mechanical and electrical properties of the double-layer film system GeO2–Si3N4 on Ge

✍ Scribed by Gorokhov, E. B. ;Kosulina, I. G. ;Pokrovskaya, S. V. ;Neizvestny, I. G.

Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
1007 KB
Volume
101
Category
Article
ISSN
0031-8965

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## Abstract In this paper the breakdown field strength and resistivity of sputter‐deposited Al~2~O~3~, SiO~2~ and Si~3~N~4~ layers are investigated in the temperature range between room temperature and 400 °C. All the investigated layers showed excellent insulation properties, even at elevated samp