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The effect of a tetragonal GeO2 layer on the electrical properties of Ge surfaces

✍ Scribed by Pokrovskaya, S. V. ;Neizvestnii, I. T. ;Németh-Sallay, M. ;Cseh, I.

Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
136 KB
Volume
11
Category
Article
ISSN
0031-8965

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During the deposition process of high-k gate oxides on Ge, the Ge interface tends to be oxidized to form GeO x , leading to the introduction of interface states which compromise transistor performance. It has been suggested that a Ba termination layer on Ge could fulfill the same passivating role on