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Study of the sputtering process with Rutherford backscattering

✍ Scribed by H. Kräutle


Publisher
Elsevier Science
Year
1976
Weight
387 KB
Volume
137
Category
Article
ISSN
0029-554X

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Rutherford backscattering spectrometry c
✍ Jiang, W.; Weber, W. J.; Thevuthasan, S.; McCready, D. E. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 158 KB 👁 2 views

Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Ñuences ranging from 7.5 Â 1017 to 1 Â 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc