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Formation of CrSi2 studied by Rutherford backscattering spectrometry

✍ Scribed by S Tobbeche; C Benazzouz; N Boussaa; M Zilabdi; A Benouatas; A Bouabellou; R Halimi

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
186 KB
Volume
45
Category
Article
ISSN
0042-207X

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✍ Jiang, W.; Weber, W. J.; Thevuthasan, S.; McCready, D. E. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 158 KB πŸ‘ 2 views

Single-crystal 6H-SiC (a-SiC) wafers were irradiated with He', C' and Si' ions to Γ‘uences ranging from 7.5 Γ‚ 1017 to 1 Γ‚ 1020 ions m-2 at various temperatures (160-870 K). Damage accumulation and subsequent defect annealing (up to 1170 K) have been studied using in situ 2.0 MeV He' Rutherford backsc