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Study of the I–V characteristics of SnO2:F/AgInS2 (p)/Al Schottky diodes

✍ Scribed by Z. Aissa; A. Bouzidi; M. Amlouk

Book ID
116607234
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
356 KB
Volume
506
Category
Article
ISSN
0925-8388

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✍ S. S. Patel; B. H. Patel; T. S. Patel 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 121 KB

## Abstract An Al/p‐AgGaTe~2~ polycrystalline thin film schottky barrier diode have been prepared by flash‐evaporation of p‐AgGaTe~2~ onto a pre‐deposited film of aluminium. The current‐voltage, capacitance‐voltage and photoresponse of the diode have been investigated. The important physical parame