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Study of the field dependence for the parameters of the A-center in Si by capacitance transient spectroscopy

✍ Scribed by Komarov, B. A. ;Sopryakov, V. I.

Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
475 KB
Volume
66
Category
Article
ISSN
0031-8965

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We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum-and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application