GaN:Mg/AlGaN single heterostructures were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE) leading to the fabrication of light emitting diodes (LEDs). p-type is successfully achieved using Mg, obtaining hole concentrations in the range of 1 Â 10 17 cm À3 . Although an in
Study of the activation process of Mg dopant in GaN:Mg layers
✍ Scribed by B. Paszkiewicz; R. Paszkiewicz; A. Szyszka; M. Wosko; W. Macherzynski; M. Tlaczala; R. Kudrawiec; M. Syperek; J. Misiewicz; E. Dumiszewska; W. Strupinski
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 254 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1862-6351
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