Activation of Mg Acceptor in GaN : Mg with Pulsed KrF (248 nm) Excimer Laser Irradiation
✍ Scribed by Dong-Joon Kim; Hyun-Min Kim; Myung-Geun Han; Yong-Tae Moon; Seonghoon Lee; Seong-Ju Park
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 67 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
We report on the activation of Mg acceptors in Mg-doped GaN films, grown by metalorganic chemical vapor deposition, via the use of a pulsed KrF (248 nm) excimer laser irradiation. The as-grown GaN : Mg, which was irradiated by the KrF excimer laser at a laser energy density of 590 mJ/cm 2 in a N 2 ambient showed a hole concentration of 4.42 Â 10 17 cm --3 . Furthermore the hole concentration in GaN : Mg, which was activated by a conventional rapid thermal annealing, was increased from 4.3 Â 10 17 to 9.42 Â 10 17 cm --3 as the result of subsequent laser irradiation. These results suggest that a pulsed KrF excimer laser irradiation can dramatically enhance the p-type conductivity of GaN : Mg by efficiently dissociating the Mg-H complexes.