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Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures

✍ Scribed by R. Kudrawiec; M. Motyka; J. Misiewicz; B. Paszkiewicz; R. Paszkiewicz; M. Tłaczała


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
209 KB
Volume
40
Category
Article
ISSN
0026-2692

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