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Study of temperature dependence of positive charge generation in thin dielectric film of MOS structure under high-fields

✍ Scribed by G.G. Bondarenko; V.V. Andreev; V.E. Drach; S.A. Loskutov; M.A. Stolyarov


Book ID
108289304
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
201 KB
Volume
515
Category
Article
ISSN
0040-6090

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Hole trapping in the gate oxide of MOS devices causes instabilities of device parameters and serious reliability problems in MOS transistors and memories. In this work, hole traps, generated by high-field electron injection, are studied in thermal oxides in the thickness range below 10 nm. PMOS tran