Study of sublattice inversion in GaAs/Ge/GaAs(001) crystal by X-ray diffraction
โ Scribed by Shinichiro Nakatani; Shuji Kusano; Toshio Takahashi; Keiichi Hirano; Shinji Koh; Takashi Kondo; Ryoichi Ito
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 143 KB
- Volume
- 159-160
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Experimental X-ray double crystal diffraction rocking curves for different InGaAs/ GaAs superlattices grown by molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) are used to obtain theoretically calculated rocking curves, based on Takagi's theory of dynamic X-ray diffr
Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice