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Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction

โœ Scribed by V.H. Etgens; R. Pinchaux; M. Sauvage-Simkin; J. Massies; N. Jedrecy; N. Greiser; S. Tatarenko

Publisher
Elsevier Science
Year
1991
Weight
58 KB
Volume
251-252
Category
Article
ISSN
0167-2584

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Due to the strongly restricted penetration depth, X-ray diffraction under grazing incidence and exit allows observation and characterisation of ultra-thin interface layers down to thicknesses of one monolayer, even though it may be covered by a much larger one. Because of the special geometry, this