Grazing incidence X-ray diffraction study of the InAs/GaAs interface

✍ Scribed by H. Rhan

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 275 KB
• Volume: 221
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(95)00929-9

✦ Synopsis

Due to the strongly restricted penetration depth, X-ray diffraction under grazing incidence and exit allows observation and characterisation of ultra-thin interface layers down to thicknesses of one monolayer, even though it may be covered by a much larger one. Because of the special geometry, this thin layer itself gives rise to a peak of its own, which may be well separated as long as the lateral lattice parameters of the layers differ slightly. On the InAs/GaAs system, the existence of a quite sharply limited interface region of(InGa)As compound could be detected. The composition is deduced from the lattice parameter difference and the thickness from the scattering intensity versus the incidence angle.