Study of structural changes caused by nanosecond laser annealing of Ge- and Sn-implanted Si crystal

✍ Scribed by D. Klinger; D. Żymierska; R. Minikayev; K. Nowakowska-Langier; J.B. Pelka; L. Nowicki; B. Kozankiewicz; W. Caliebe

• Book ID: 108257089
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 652 KB
• Volume: 80
• Category: Article
• ISSN: 0969-806X
• DOI: 10.1016/j.radphyschem.2011.03.017