Study of strained-silicon channel metal–oxide–semiconductor field effect transistors by large angle convergent-beam electron diffraction

✍ Scribed by H.H. Liu; X.F. Duan; Qiuxia Xu; Bang-Gui Liu

• Book ID: 108291735
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 625 KB
• Volume: 108
• Category: Article
• ISSN: 0304-3991
• DOI: 10.1016/j.ultramic.2008.01.002