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Study of Si wafer surfaces irradiated by gas cluster ion beams

โœ Scribed by H. Isogai; E. Toyoda; T. Senda; K. Izunome; K. Kashima; N. Toyoda; I. Yamada

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
408 KB
Volume
257
Category
Article
ISSN
0168-583X

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Study of gas cluster ion beam surface tr
Study of gas cluster ion beam surface treatments for mitigating RF breakdown
โœ D.R. Swenson; E. Degenkolb; Z. Insepov ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 662 KB

Surface processing with high-energy gas cluster ion beams (GCIB) is investigated for increasing the high voltage breakdown strength of RF cavities and electrodes in general. Various GCIB treatments were studied for Nb, Cu, Stainless Steel and Ti electrode materials using beams of Ar, Ar + H 2 , O 2