Study of interfacial oxide layer of LaAlO3gate dielectrics on Si for metal–insulator–semiconductor devices

✍ Scribed by H. Ling; X. Lu; A. Li; D. Wu; Q. Shao; J. Sheng; Z. Liu; N. Ming; X. Wang; B.-Y. Nguyen; H. Zhou

• Book ID: 106018984
• Publisher: Springer
• Year: 2005
• Tongue: English
• Weight: 545 KB
• Volume: 80
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/s00339-003-2266-6