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Study of interface trap properties in MOSFETs using split-current measurements

โœ Scribed by Mohamed El-Sayed; Hisham Haddara


Book ID
103394757
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
565 KB
Volume
34
Category
Article
ISSN
0038-1101

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Effect of single-electron interface trap
โœ A. Asenov; R. Balasubramaniam; A.R. Brown; J.H. Davies ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 103 KB

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping c