✦ LIBER ✦
Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFETs
✍ Scribed by Okhonin, S.; Hessler, T.; Dutoit, M.
- Book ID
- 114536430
- Publisher
- IEEE
- Year
- 1996
- Tongue
- English
- Weight
- 773 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0018-9383
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