Ion implantation is of great importance in semiconductor device fabrication. Owing to the increasing interest of" the microelectronic industry in the implantation of ions in the megaelectronvolt energy range, high energy beams are required. Furthermore, for several applications the implanted dose is
Study of high energy Mn+1ion implantation in GaAs
β Scribed by Anupama Chanda; H. P. Lenka; Chacko Jacob
- Publisher
- Springer
- Year
- 2008
- Tongue
- English
- Weight
- 362 KB
- Volume
- 94
- Category
- Article
- ISSN
- 1432-0630
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π SIMILAR VOLUMES
Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 Γ 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa
## Infra-red transmission and electrical characteristics of single crystal GaAs substrates implanted with 70 MeV "'Sn ions have been investigated after implantation andsubsequentannealing treatments. The optical density cxx is found to increase with implanted dose overphoton energy range 0.6-1.4 e