Raman scattering study on Ga1–xMnx As pr
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M. R. Islam; N. F. Chen; M. Yamada
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Article
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2009
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John Wiley and Sons
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English
⚖ 257 KB
Raman scattering measurements have been performed in Ga 1-x Mn x As crystals prepared by Mn ions implantation, deposition, and post-annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs-like phonon modes, where the GaAs-like