✦ LIBER ✦

Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0)

✍ Scribed by V. Janardhanam; A. Ashok Kumar; V. Rajagopal Reddy; P. Narasimha Reddy

Book ID: 116605208
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 806 KB
Volume: 485
Category: Article
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2009.05.141

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Temperature dependent current–voltage (I

Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

✍ Tuncay Tunç; Şemsettin Altindal; İbrahim Uslu; İlbilge Dökme; Habibe Uslu 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 706 KB

Analysis of current–voltage–temperature

Analysis of current–voltage–temperature (––) and capacitance–voltage–temperature (––) characteristics of Ni/Au Schottky contacts on n-type InP

✍ S. Shankar Naik; V. Rajagopal Reddy 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 636 KB

Barrier characteristics of gold Schottky

Barrier characteristics of gold Schottky contacts on moderately doped n-InP based on temperature dependent I–V and C–V measurements

✍ M. Soylu; B. Abay 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 680 KB

Analysis of current - voltage - temperat

Analysis of current - voltage - temperature characteristics of In and Cu contacts on n-type MoSe2 single crystals

✍ C. K. Sumesh; K. D. Patel; V. M. Pathak; R. Srivastav 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 245 KB

## Abstract The current voltage characteristics of In / Cu with n‐type MoSe~2~ Schottky diodes were measured over a wide temperature range 50 < T < 300 K. The interface formed by In and MoSe~2~ shows ohmic behavior after annealing the contact at 100 °C for 12 h. The ohmic nature was retained at all

Combined EELS, LEED and SR-XPS study of

Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(1 0 0)—Effect of annealing at 450 °C

✍ C. Robert-Goumet; M. Petit; L. Bideux; B. Gruzza; G. Monier; V. Matolín; T. Skál 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 606 KB

Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1&#xa0;0&#xa0;0)

Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0)