Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

✍ Scribed by Tuncay Tunç; Şemsettin Altindal; İbrahim Uslu; İlbilge Dökme; Habibe Uslu

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 706 KB
• Volume: 14
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2011.01.018