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Analysis of current–voltage–temperature (––) and capacitance–voltage–temperature (––) characteristics of Ni/Au Schottky contacts on n-type InP

✍ Scribed by S. Shankar Naik; V. Rajagopal Reddy


Book ID
108269075
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
636 KB
Volume
48
Category
Article
ISSN
0749-6036

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Current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky diodes have been measured in 40-320 K temperature range, and analyzed in terms of thermionic emission theory by incorporating the concept of barrier inhomogeneity at the metal/semiconductor interface through a Gaussian distribution functi