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Temperature dependence of current—voltage characteristics of Au/n-GaAs epitaxial Schottky diode

✍ Scribed by R. Singh; S. K. Arora; Renu Tyagi; S. K. Agarwal; D. Kanjilal

Publisher
Springer-Verlag
Year
2000
Tongue
English
Weight
64 KB
Volume
23
Category
Article
ISSN
0250-4707

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Temperature variation of current–voltage
Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes
✍ S. Doğan; S. Duman; B. Gürbulak; S. Tüzemen; H. Morkoç 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 341 KB

Current-voltage (I-V) characteristics of Au/Ni/n-GaN Schottky diodes have been measured in 40-320 K temperature range, and analyzed in terms of thermionic emission theory by incorporating the concept of barrier inhomogeneity at the metal/semiconductor interface through a Gaussian distribution functi