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Temperature dependence of current–voltage characteristics of Sn/p-Si Schottky contacts

✍ Scribed by M.E. Aydın; Ö. Güllü; N. Yıldırım

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
274 KB
Volume
403
Category
Article
ISSN
0921-4526

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✍ Wen-Chang Huang; Chia-Tsung Horng; Jin Chang Cheng; Chien-Chou Chen 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 589 KB

The current-voltage (I-V) characteristics of the Al/NPB/p-Si contact shows rectifying behavior with a potential barrier formed at the contact interface. The barrier height and ideality factor values of 0.65 eV and 1.33 are measured at the forward bias of the diode. The barrier height of the Al/NPB/p