Analysis of current - voltage - temperature characteristics of In and Cu contacts on n-type MoSe2 single crystals

✍ Scribed by C. K. Sumesh; K. D. Patel; V. M. Pathak; R. Srivastav

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 245 KB
• Volume: 46
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201000553

✦ Synopsis

Abstract

The current voltage characteristics of In / Cu with n‐type MoSe~2~ Schottky diodes were measured over a wide temperature range 50 < T < 300 K. The interface formed by In and MoSe~2~ shows ohmic behavior after annealing the contact at 100 °C for 12 h. The ohmic nature was retained at all the measured temperatures. The Cu ‐ nMoSe2 interface formed a Schottky junction diode with a good rectification ratio. The Schottky barrier height and the ideality factor thereby obtained were 0.72 eV and 1.45, respectively, at room temperature. Below room temperature, the barrier height and the ideality factor vary with decreasing temperature. The changes are significant at low temperatures. Barrier height inhomogeneities at the interface cause deviation in the zero‐bias barrier height and the ideality factor at low temperatures, and produce extra current such that I‐V characteristics remain consistent with the thermionic emission mechanism. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)