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Study of crystal damage by ion implantation using micro RBS/channeling

โœ Scribed by D. Grambole; F. Herrmann; V. Heera; J. Meijer

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
506 KB
Volume
260
Category
Article
ISSN
0168-583X

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Cobalt disilicide layers were formed by ion beam synthesis using 35 keV Co + focused ion beam (FIB) implantation into silicon. A strong influence of the pixel dwell-time on the layer formation was found. Only for short pixel dwell-times (about 1 ms) closed layers with sufficient quality for device a