✦ LIBER ✦

RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation

✍ Scribed by J Teichert; M Voelskow; L Bischoff; S Hausmann

Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 564 KB
Volume: 51
Category: Article
ISSN: 0042-207X
DOI: 10.1016/s0042-207x(98)00171-7

No coin nor oath required. For personal study only.

✦ Synopsis

Cobalt disilicide layers were formed by ion beam synthesis using 35 keV Co + focused ion beam (FIB) implantation into silicon. A strong influence of the pixel dwell-time on the layer formation was found. Only for short pixel dwell-times (about 1 ms) closed layers with sufficient quality for device application could be formed. To understand the dwell-time effect the as-implanted samples were examined by Rutherford backscattering (RBS) and channeling analysis. A method is presented which allows quantitative measurements of samples where the implanted areas are smaller than the diameter of the RBS beam. Evidence has been obtained that the silicon crystal damage is less for short dwell-times.

📜 SIMILAR VOLUMES

Nitrogen depth distribution, interface a

Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation

✍ Markwitz, Andreas ;Baumann, Horst ;Michelmann, Rolf W. ;Meyer, J�rg D. ;Krimmel, 📂 Article 📅 1997 🏛 Springer-Verlag ⚖ 631 KB

Chemical bonding and interface analysis

Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)

✍ A. Markwitz; H. Baumann; E. F. Krimmel; R. W. Michelmann; C. Maurer; E. C. Palou 📂 Article 📅 1994 🏛 Springer 🌐 English ⚖ 443 KB

Grazing-incidence diffraction strain ana

Grazing-incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation

✍ Grenzer, J. ;Pietsch, U. ;Bischoff, L. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 562 KB

## Abstract Strain analysis of a laterally patterned Si‐wafer was carried out utilizing X‐ray grazing‐incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV

Analysis of the structure and defects in

Analysis of the structure and defects in heteroepitaxial Si/CoSi2/Si layers produced by ion beam synthesis and rapid thermal annealing

✍ Karen J. Reeson; Russell S. Spraggs; Russell M. Gwilliam; Brian J. Sealy 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 383 KB