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Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN

✍ Scribed by B. P. Luther; S. E. Mohney; J. M. Delucca; R. F. Karlicek


Book ID
107457801
Publisher
Springer US
Year
1998
Tongue
English
Weight
355 KB
Volume
27
Category
Article
ISSN
0361-5235

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## Abstract The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n‐type GaN (4.0 Γ— 10^18^ cm^–3^) have been investigated by current–voltage (__I__ –__V__), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The ele