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Study of a sandwich structure of transparent conducting oxide films prepared by electron beam evaporation at room temperature

โœ Scribed by Po Kai Chiu, Wen Hao Cho, Hung Ping Chen, Chien Nan Hsiao, Jer Ren Yang


Book ID
119905948
Publisher
Springer-Verlag
Year
2012
Tongue
English
Weight
262 KB
Volume
7
Category
Article
ISSN
1931-7573

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Electron beam evaporation was employed to deposit hafnium on silicon (100) substrate, followed by a rapid thermal oxidation process to fabricate hafnium dioxide thin film. Hafnium was transformed to hafnium oxide above a oxidizing temperature of 500 8C. An interfacial layer of hafnium silicate was o