Preparation of hafnium oxide thin film by electron beam evaporation of hafnium incorporating a post thermal process

✍ Scribed by Su Xing; Ninglin Zhang; Zhitang Song; Qinwo Shen; Chenlu Lin

• Book ID: 104305783
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 152 KB
• Volume: 66
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)00911-5

✦ Synopsis

Electron beam evaporation was employed to deposit hafnium on silicon (100) substrate, followed by a rapid thermal oxidation process to fabricate hafnium dioxide thin film. Hafnium was transformed to hafnium oxide above a oxidizing temperature of 500 8C. An interfacial layer of hafnium silicate was observed between HfO 2 and silicon substrate. Oxidation temperature greatly affects interfacial quality and leakage current of the film.