Studies on the concentration profiles and growth rate of GaP by liquid-phase epitaxy
β Scribed by H. Rezagholipour Dizaji; R. Dhanasekaran
- Publisher
- Springer US
- Year
- 1996
- Tongue
- English
- Weight
- 328 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0957-4522
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π SIMILAR VOLUMES
A theoretical analysis of the nucleation kinetics of liquid phase epitaxial {LPE} growth of lnGaAs on GaAs was conducted using classical heterogeneous nucleation theory incorporating the lattice mismatch between the alloy and the substratc. Non-equilibrium contact between the inGaAs ternary saturate
## Abstract It has been proved that the dependence of the growth rate __V__ of a LPE GaAs layer on the relative supersaturation Ο of the solution at the interphase boundary can be determined on the basis of growth rate measurements of this layer in the case when crystallization is controlled by the
Zn 3 As 2 epitaxial layers were grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) using Ga as the solvent. Zinc mole fraction in the growth melt was varied from 1.07 Γ 10 Γ 2 to 6 Γ 10 Γ 2 . X-ray diffraction spectrum exhibits a sharp peak at 43.31 characteristic of Zn 3 As 2 crystallin