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Investigation on the concentration profiles of As during the current-controlled liquid phase epitaxial growth of GaAs

✍ Scribed by R.S.Qhalid Fareed; R. Dhanasekaran; P. Ramasamy


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
379 KB
Volume
140
Category
Article
ISSN
0022-0248

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## Abstract It has been proved that the dependence of the growth rate __V__ of a LPE GaAs layer on the relative supersaturation Οƒ of the solution at the interphase boundary can be determined on the basis of growth rate measurements of this layer in the case when crystallization is controlled by the