Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization

✍ Scribed by M. Nagarajan; S. Sudhakar; S. Lourdudoss; K. Baskar

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 482 KB
• Volume: 314
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.11.126

✦ Synopsis

Zn 3 As 2 epitaxial layers were grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) using Ga as the solvent. Zinc mole fraction in the growth melt was varied from 1.07 Â 10 À 2 to 6 Â 10 À 2 . X-ray diffraction spectrum exhibits a sharp peak at 43.31 characteristic of Zn 3 As 2 crystalline layer. The peak intensity increases with increase in zinc mole fraction in the growth melt. The compositions of the asgrown Zn 3 As 2 layers were confirmed by energy dispersive X-ray (EDX) analysis. Surface morphology was studied using scanning electron microscopy (SEM) and the thickness of the epilayers was also determined. The Hall measurements at 300 K indicate that Zn 3 As 2 epilayers are unintentionally p-doped. With an increase of zinc mole fraction in the growth melt, carrier concentration increases and carrier mobility decreases. Infrared optical absorption spectroscopy showed a sharp absorption edge at 1.0 eV corresponding to the reported band gap of Zn 3 As 2 .