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Studies of flicker noise in In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes

โœ Scribed by Sze-Him Ng; Charles Surya

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
261 KB
Volume
35
Category
Article
ISSN
0038-1101

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Rutherford backscattering spectrometry in combination with channeling has been used to compare the ionirradiation-induced amorphisation of In 0.53 Ga 0.47 As with that of InAs and GaAs. In contrast to the well-known behaviour of Al x Ga 1ร€x As, the ternary alloy In 0.53 Ga 0.47 As did not exhibit am