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Temperature dependence of the electrical characteristics of Ag/In0.53Ga0.47As diodes formed at low temperature

โœ Scribed by H.J. Lee; J.W. Palmer; W.A. Anderson


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
360 KB
Volume
37
Category
Article
ISSN
0038-1101

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The magnetoresistance of antidot lattices and the magnetic field dependence of the threeterminal resistance of transverse electron focusing (TEF) devices is studied in a 2DEG in the lattice-matched In 0.53 Ga 0.47 As/InP heterojunction system, as a function of temperature. Ballistic effects are obse