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Electrical characteristics of an ion-implanted p-Ga0.47In0.53As MESFET at different Schottky barrier heights

✍ Scribed by S.N. Chattopadhyay; Debjani Dutta; B.B. Pal


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
286 KB
Volume
33
Category
Article
ISSN
0038-1101

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