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Structure, defect and transport properties of highly photoconductive a-SiGe:H and a-SiC:H alloys

โœ Scribed by Z.E. Smith; A. Matsuda; H. Matsuura; H. Oheda; M. Tanaka; S. Yokoyma

Book ID
115987083
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
165 KB
Volume
114
Category
Article
ISSN
0022-3093

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IR, pbotoconductivity, Raman and photothermal deflection spectroscopy measurements were used to probe the relationship between material quality and the amount of microsl~ucture in glow discharge deposited a-SiC:H and a-SiGe:H films. We find that the microstructure is directly responsible for the dec