Structural, optical and electrical chara
โ
M. Balarin; O. Gamulin; M. Ivanda; M. Kosoviฤ; D. Ristiฤ; M. Ristiฤ; S. Musiฤ; K
๐
Article
๐
2009
๐
Elsevier Science
๐
English
โ 763 KB
Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt