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Gas sensors based on silicon devices with a porous layer

โœ Scribed by G. Barillaro; A. Diligenti; A. Nannini; L. M. Strambini

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
286 KB
Volume
2
Category
Article
ISSN
1862-6351

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Gas sensors for high temperature operati
Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices
โœ A. Arbab; A. Spetz; I. Lundstrรถm ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 441 KB

Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800 "C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, which are dissociated on the catalytic metal surface, create a decrease of the flat band voltage of the MOS ca