Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon
✍ Scribed by Schmidt, Jan; Bothe, Karsten
- Book ID
- 118068376
- Publisher
- The American Physical Society
- Year
- 2004
- Tongue
- English
- Weight
- 177 KB
- Volume
- 69
- Category
- Article
- ISSN
- 1098-0121
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## Abstract We review recent results relating to the boron–oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron–oxygen defect, which involves substitutional boron. In addition, the proposed prese
Properties of the recently reported deep-level radiation defects in oxygen-rich silicon (the M-center in p-type Si with the DLTS levels at E v þ 0:36 and E v þ 0:12 eV, and the X-center in n-type Si with the level at E c À 0:11 eV, respectively) are investigated by means of DLTS and IR absorption. W