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Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

✍ Scribed by Rougieux, F.E.; Forster, M.; Macdonald, D.; Cuevas, A.; Lim, B.; Schmidt, J.

Book ID
117881114
Publisher
Institute of Electrical and Electronics Engineers
Year
2011
Tongue
English
Weight
472 KB
Volume
1
Category
Article
ISSN
2156-3381

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## Abstract We review recent results relating to the boron–oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron–oxygen defect, which involves substitutional boron. In addition, the proposed prese