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Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

✍ Scribed by Lim, Bianca; Rougieux, Fiacre; Macdonald, Daniel; Bothe, Karsten; Schmidt, Jan

Book ID
118068273
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
1009 KB
Volume
108
Category
Article
ISSN
0021-8979

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## Abstract We review recent results relating to the boron–oxygen defect in compensated crystalline silicon for solar cells. The experimental observations are not easily explained by the standard model for the boron–oxygen defect, which involves substitutional boron. In addition, the proposed prese