## Abstract Nanostructured pโtype and nโtype porous silicon samples were prepared for (100) and (111) orientations and a systematic study is carried out on the effects of orientations, dopant type (boron and phosphorous), current density (20 and 30mA/cm^2^) and etching time on the formation, optica
โฆ LIBER โฆ
Positron annihilation in n- and p-type, B- and P-doped silicon crystals of 100 and 111 orientations
โ Scribed by James J. Kelly; Richard M. Lambrecht
- Publisher
- Elsevier Science
- Year
- 1977
- Tongue
- English
- Weight
- 301 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0375-9601
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