Structure and morphology of aluminium doped Zinc-oxide layers prepared by atomic layer deposition
✍ Scribed by Zs. Baji; Z. Lábadi; Z.E. Horváth; I. Bársony
- Book ID
- 113937391
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 709 KB
- Volume
- 520
- Category
- Article
- ISSN
- 0040-6090
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We investigated the aluminum distribution in aluminum-doped zinc oxide films grown by atomic layer deposition. Surface morphology, structure, composition and electrical properties of obtained films were studied. For the aluminum content less than 2 at.%, a periodicity of Al distribution along the la
## Abstract Atomic layer deposition (ALD) was used to fabricate transparent and conductive thin films of ZnO. Two hundred‐nano metre thick ZnO films were deposited on glass substrates at low growth temperatures varied between 120 and 240 °C. As zinc and oxygen precursors we used diethylzinc (DEZn)