Structure and luminescent properties of GaN nanorods grown by magnetron sputtering and ammoniating technique
โ Scribed by Jinhua Chen; Chengshan Xue; Huizhao Zhuang; Hong Li; Lixia Qin; Zhaozhu Yang
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 546 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0924-0136
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โฆ Synopsis
A novel rare earth metal seed Tb was employed as the catalyst to grow GaN nanorods.
Large-scale GaN nanorods were synthesized successfully through ammoniating Ga 2 O 3 /Tb films sputtered on Si(1 1 1) substrates. Studies by X-ray diffraction indicate that the nanorods are hexagonal GaN. Observations by scanning electron microscopy and high-resolution transmission electron microscopy show that GaN is of single-crystal nanorod structure.
Photoluminescence spectrum shows the products possess good luminescent properties.
The growth mechanism of GaN nanorods is also discussed.
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In this work we report on the results obtained on NbN x thin films grown on both common glass and silicon wafer substrates by RF magnetron sputtering at different substrate temperatures and different target power supplies. The crystalinity, morphology and surface composition of the deposited films h
GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga 2 O 3 / V films at 900 8C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ra