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Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements

✍ Scribed by Fontcuberta i Morral, A.; Roca i Cabarrocas, P.; Clerc, C.


Book ID
123620659
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
137 KB
Volume
69
Category
Article
ISSN
1098-0121

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## Abstract Silicon oxynitride (SiO~x~ N~y~) thin films were deposited on silicon substrates by ion‐assisted deposition. Variable angle spectroscopic ellipsometry (VASE) was used to optically characterize the deposited film properties, such as layer thickness and composition, film surface and inter