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Structure and electrical properties of HfO2high-kfilms prepared by pulsed laser deposition on Si (100)

✍ Scribed by Hao Wang; Y. Wang; J. Feng; C. Ye; B. Y. Wang; H. B. Wang; Q. Li; Y. Jiang; A. P. Huang; Z. S. Xiao

Publisher
Springer
Year
2008
Tongue
English
Weight
413 KB
Volume
93
Category
Article
ISSN
1432-0630

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Structure and properties of silver doped
Structure and properties of silver doped SnSe2and Ge2Sb2Te5thin films prepared by pulsed laser deposition
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## Abstract Amorphous thin films of SnSe~2~ and Ge~2~Sb~2~Te~5~ doped by different amount of silver (0.1, 0.2, 0.5 and 1 Ag atoms per formula unit) have been prepared by pulsed laser deposition (PLD) starting from solid polycrystalline targets. The films were investigated by X‐ray diffraction (XRD)