Structure and chirality distribution of multiwalled boron nitride nanotubes
โ Scribed by Celik-Aktas, A.; Zuo, J. M.; Stubbins, J. F.; Tang, C.; Bando, Y.
- Book ID
- 121739311
- Publisher
- American Institute of Physics
- Year
- 2005
- Tongue
- English
- Weight
- 571 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0003-6951
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๐ SIMILAR VOLUMES
In many respects, a boron nitride nanotube (BNNT) has advantageous properties when compared to a standard carbon nanotube (CNT). For example, BNNTs are stable wide-band-gap semiconductors, independent of diameter and chirality. [1] In contrast, the electrical performance of a CNT is a complex functi
In many respects, a boron nitride nanotube (BNNT) has advantageous properties when compared to a standard carbon nanotube (CNT). For example, BNNTs are stable wide-band-gap semiconductors, independent of diameter and chirality. [1] In contrast, the electrical performance of a CNT is a complex functi
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